Quantification of InxGa1-xP composition modulation by nanometric scale HAADF simulations
Identifieur interne : 000634 ( Main/Repository ); précédent : 000633; suivant : 000635Quantification of InxGa1-xP composition modulation by nanometric scale HAADF simulations
Auteurs : RBID : Pascal:13-0192556Descripteurs français
- Pascal (Inist)
- Composé ternaire, Phosphure de gallium, Phosphure d'indium, Semiconducteur, Composé minéral, Simulation, Cellule solaire, Arséniure de gallium, Arséniure d'indium, Germanium, Microscopie électronique transmission, Microscopie électronique balayage transmission, Microscopie électronique, Séparation phase, 8460J, 6855N.
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- concept : Composé minéral, Simulation.
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Abstract
Multijunction solar cell efficiency is highly sensitive to structural and chemical variations. These variations can be quantified at nm scale in InGaP/InGaAs/Ge multijunctions using transmission electron microscopy modes, e.g. diffraction contrast (DC-CTEM) and high angle annular dark field (STEM-HAADF). These studies determined the structure and the composition modulation of InGaP layers with sensitivity below 1% of In composition. To quantify the In-related variation, STEM-HAADF profiles are compared to numerically simulated ones. The fit with the experimental contrast shows local variations of 4.25%In for distances below 30 nm.
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Gutierrez</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departamento de Ciencia de los Materials e IM y QI, Universidad de Cádiz</s1><s2>11510 Puerto Real</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Andalousie</region></placeName></affiliation></author><author><name sortKey="Araujo, D" uniqKey="Araujo D">D. Araujo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departamento de Ciencia de los Materials e IM y QI, Universidad de Cádiz</s1><s2>11510 Puerto Real</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Andalousie</region></placeName></affiliation></author><author><name sortKey="Rodriguez Messmer, E" uniqKey="Rodriguez Messmer E">E. Rodriguez-Messmer</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Isofotón, C/Severo Ochoa 50</s1><s2>29590 Málaga</s2><s3>ESP</s3><sZ>4 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Andalousie</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0192556</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0192556 INIST</idno><idno type="RBID">Pascal:13-0192556</idno><idno type="wicri:Area/Main/Corpus">000D30</idno><idno type="wicri:Area/Main/Repository">000634</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron microscopy</term><term>Gallium arsenides</term><term>Gallium phosphide</term><term>Germanium</term><term>Indium arsenides</term><term>Indium phosphide</term><term>Inorganic compound</term><term>Phase separation</term><term>Scanning transmission electron microscopy</term><term>Semiconductor materials</term><term>Simulation</term><term>Solar cell</term><term>Ternary compound</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Composé ternaire</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Semiconducteur</term><term>Composé minéral</term><term>Simulation</term><term>Cellule solaire</term><term>Arséniure de gallium</term><term>Arséniure d'indium</term><term>Germanium</term><term>Microscopie électronique transmission</term><term>Microscopie électronique balayage transmission</term><term>Microscopie électronique</term><term>Séparation phase</term><term>8460J</term><term>6855N</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term><term>Simulation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Multijunction solar cell efficiency is highly sensitive to structural and chemical variations. These variations can be quantified at nm scale in InGaP/InGaAs/Ge multijunctions using transmission electron microscopy modes, e.g. diffraction contrast (DC-CTEM) and high angle annular dark field (STEM-HAADF). These studies determined the structure and the composition modulation of InGaP layers with sensitivity below 1% of In composition. To quantify the In-related variation, STEM-HAADF profiles are compared to numerically simulated ones. The fit with the experimental contrast shows local variations of 4.25%In for distances below 30 nm.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>269</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Quantification of In<sub>x</sub>Ga<sub>1-x</sub>P composition modulation by nanometric scale HAADF simulations</s1></fA08><fA11 i1="01" i2="1"><s1>PASTORE (C. 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